specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 4 june 2011 WJA1015 +5v active-bias ingap hbt gain block product features ? cascadable gain block ? 50 C 2300 mhz ? 15 db gain ? +17 dbm p1db ? +37 dbm oip3 @ 900mhz ? operates from +5v @ 65ma ? robust 1000v esd, class 1c ? rohscompliant sot89 package applications ? wireless infrastructure ? general purpose ? catv / ftth ? vhf / uhf transmission product description the WJA1015 is a cascadable gain block that offers high linearity in a lowcost surfacemount package. at 900 mhz, the WJA1015 typically provides 15 db gain, +37 dbm oip3, and +17 dbm p1db. the device is housed i n a rohscompliant sot89 industrystandard smt package using a nipdau plating to eliminate the possibility of tin whiskering. the wja1000 consists of darlington pair amplifiers using a high reliability ingap/gaas hbt process technolog y. the mmic amplifier is internally matched to 50? and only requires dcblocking capacitors and a bias inductor for operation. an internal active bias is designed to e nable stable performance over temperature. a dropping bia s resistor is not required allowing the device to be biased directly from a +5v supply voltage. the broadband amplifier can be directly applied to various current and next generation wireless technologies s uch as gsm, pcs, and wcdma. the WJA1015 is ideal for general purpose applications such as lo buffering, if amplification and predriver stages within the 50 t o 2300 mhz frequency range. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 50 2300 test frequency mhz 900 gain db 13.5 14.8 16.5 input return loss db 13 output return loss db 18 output p1db dbm +17 output ip3 (2) dbm +32 +37 output ip2 dbm +51 noise figure db 5 device voltage v 5 device current ma 54 65 74 1. test conditions: 25 oc, supply voltage = +5v, 5 0 system. sparameters and 3oip measured at device pins. all other specifications measured on e valuation board. 2. 3oip measured with two tones at an output power of +6dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature 55 to +150 c supply voltage +6.5 v input power +24 dbm jc (junction to paddle) 83.8 c / w maximum junction temperature 150 c operation of this device above any of these paramet ers may cause permanent damage. typical performance (3) parameter units typical frequency mhz 200 500 900 1900 2100 s21 db 14.8 14.7 14.5 13.9 14.0 s11 db 13 15 17 19 20 s22 db 18 18 16 10 10 output p1db dbm +18.9 +18.5 +17 +15.1 +14.1 output ip3 (2) dbm +40.2 +38.7 +36.8 +28.2 +26.1 output ip2 dbm +51.7 +50.4 +51 +37.6 +35.1 noise figure db 4.7 4.9 5 5.5 5.6 3. listed typical performance parameters measured o n evaluation board. ordering information part no. description WJA1015 +5v active bias ingap hbt gain block (leadfree/green/rohscompliant sot89 package) standard tape / reel size = 1000 pieces on a 7 reel not recommended for new designs recommended replacement parts: tqp3m9028 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 4 june 2011 WJA1015 +5v active-bias ingap hbt gain block typical device rf performance supply bias = +5 v, i cc = 65 ma . gain vs. frequency 8 10 12 14 16 0 500 1000 1500 2000 2500 frequency (mhz) gain (db) -40c +25c +85c return loss t = 25c -30 -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 2500 frequency (mhz) s11, s22 (db) s11 s22 noise figure vs. frequency 2 3 4 5 6 7 8 9 10 0 500 1000 1500 2000 2500 frequency(mhz) nf(db) -40c +25c +85c oip3 vs. output power 25 30 35 40 45 0 2 4 6 8 10 output power per tone (dbm) oip3 (dbm) oip3 vs. frequency pout=6 dbm/tone 25 30 35 40 45 0 500 1000 1500 2000 frequency (mhz) oip3 (dbm) oip3 vs. vcc freq = 900mhz 25 30 35 40 45 4.7 4.8 4.9 5.0 5.1 5.2 vcc (v) oip3 (dbm) oip2 vs. frequency pout=6 dbm/tone 30 35 40 45 50 55 0 500 1000 1500 2000 2500 frequency (mhz) oip2 (dbm) p1db vs. frequency 10 12 14 16 18 20 0 500 1000 1500 2000 2500 frequency(mhz) p1db(dbm) -40c +25c +85c p1db vs. vcc freq = 900mhz 10 12 14 16 18 20 4.7 4.8 4.9 5 5.1 5.2 vcc (v) p1db (dbm) icc vs. temperature vcc = +5v 55 60 65 70 75 -50 -25 0 25 50 75 100 temperature (c) icc (ma) icc vs. vcc 20 40 60 80 100 120 4.0 4.5 5.0 5.5 6.0 vcc (v) icc (ma) -40c +25c +85c www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 4 june 2011 WJA1015 +5v active-bias ingap hbt gain block application circuit recommended component values (1) ref. name value / type size l1 470 nh ferrite core wire wound inductor (2) 0805 c1, c2 1000 pf npo chip capacitor 0603 c3 0.018 f chip capacitor 0603 r1, r2, r4 0 (3) 0603 c4, r3, r5 do not place (3) 1. the listed values are contained on the evaluation b oard to achieve optimal broadband performance 2. for lower cost and performance (500 C 2000 mhz) opt ion use 39 nh air core wire wound inductor. 3. place holders for the 0 resistors and do not place references are not ne eded for final design. typical device data sparameters (v device = +5 v, i cc = 65 ma, t = 25 c, calibrated to device leads) freq s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 10 10.52 63.44 19.18 163.04 22.14 24.30 7.41 4 5.95 50 13.48 143.67 15.63 165.20 19.24 6.82 15.61 110.90 100 13.75 161.89 15.19 167.85 19.06 1.99 18.12 135.80 200 13.81 172.53 15.00 164.59 18.97 2.21 19.28 152.96 300 13.66 176.48 14.98 159.98 18.98 5.58 19.52 158.45 400 13.63 178.58 15.01 154.44 18.98 8.03 19.74 161.23 500 13.47 179.99 14.95 148.76 18.94 10.20 19.6 3 162.42 600 13.31 178.57 14.96 142.99 19.03 13.34 19.6 5 165.00 700 13.34 177.69 14.95 136.98 19.00 14.96 19.1 1 162.52 800 13.32 175.45 14.90 131.21 18.98 18.27 19.0 8 163.06 900 13.51 174.25 14.86 125.45 18.93 20.07 18.2 5 160.28 1000 13.67 169.52 14.90 119.75 19.04 23.10 17. 45 160.15 1100 13.80 166.20 14.80 113.81 18.92 25.79 16. 68 157.71 1200 14.10 162.14 14.80 107.10 19.06 27.81 15. 96 158.14 1300 14.21 158.81 14.80 101.11 18.97 30.44 15. 20 157.24 1400 14.27 155.59 14.69 95.41 18.95 32.99 14.7 6 157.30 1500 14.40 153.43 14.71 89.04 18.99 35.65 14.1 7 158.38 1600 14.59 151.37 14.65 82.49 18.98 38.51 13.9 6 158.75 1700 14.70 150.40 14.64 76.20 18.91 40.77 13.5 2 159.89 1800 15.08 150.57 14.59 69.52 18.98 42.85 13.2 6 161.07 1900 15.61 150.87 14.57 63.11 18.98 46.28 12.7 3 163.72 2000 16.45 152.92 14.53 56.88 19.05 48.85 12.1 6 164.41 2100 17.56 154.54 14.47 50.44 19.04 52.12 11.6 5 167.15 2200 18.91 160.54 14.35 43.55 19.07 54.41 10.8 6 170.33 2300 20.49 168.57 14.14 37.00 19.15 57.85 10.3 2 173.23 2400 21.25 177.69 14.03 30.16 19.21 60.45 9.48 176.01 device sparameters are available for download from the website at: http://www.triquint.com c1 blocking capacitor rf out l1 rf choke c3 bypass capacitor r4 0 rf in c2 blocking capacitor vcc =+5.00v icc = 65 ma WJA1015 r1 0 r2 0 www.datasheet.net/ datasheet pdf - http://www..co.kr/
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 4 june 2011 WJA1015 +5v active-bias ingap hbt gain block mechanical information this package is leadfree/green/rohscompliant. it is compatible with both leadfree (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the pla ting material on the leads is nipdau. outline drawing land pattern product marking the WJA1015 will be marked with an a1015 designator with an alphanumeric lot code marked below the part designator. tape and reel specifications for this part are located on the website in the application notes section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard jstd020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35m m (#80 / .0135) diameter drill and have a final plat ed thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance . 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / ther mal via region contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. a1015 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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